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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *Fast Switching Speed APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 500 400 7 2 0.5 1.5 20 .cn mi e V V V A A IB B Base Current-Continuous Total Power Dissipation @ Ta=25 PC Total Power Dissipation @ TC=25 TJ Junction Temperature W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 10mA ; IB= 0 IC= 1mA ; IE= 0 IC= 1A; IB= 0.2A B 2SC2552 MIN 400 500 MAX UNIT V V 1.0 1.5 100 1.0 20 8 V V A mA IC= 1A; IB= 0.2A B VCB= 400V ; IE= 0 VEB= 7V; IC= 0 IC= 0.1A ; VCE= 5V Switching times tr tstg tf Rise Time Storage Time Fall Time w w scs .i w IC= 1A ; VCE= 5V .cn mi e 1.0 2.5 1.0 s s s VCC 200V, RL= 250, IB1= -IB2= 0.08A, isc Websitewww.iscsemi.cn 2 |
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